Community Resource

MBE Growth Recipes

A growing library of validated growth parameters for compound semiconductor epitaxy — contributed by the community, reviewed by our team.

3
Recipes
3
Material Systems
2
Contributors
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III-V
III-N
II-VI
🔍
GaAs
III-V
Homoepitaxial GaAs buffer layer on semi-insulating GaAs(001). Standard oxide desorption + buffer sequence for optoelectronic device bases.
Sub. Temp
580 °C
V/III Ratio
~15
Growth Rate
1.0 µm/hr
As Pressure
8×10⁻⁶ T
InP
III-V
InP homoepitaxial buffer on Fe-doped InP(001) substrate. Optimized for low background doping and smooth morphology for optoelectronic applications.
Sub. Temp
480 °C
V/III Ratio
~25
Growth Rate
0.8 µm/hr
P Pressure
1.2×10⁻⁵ T
GaN
III-N
GaN nucleation and buffer on c-plane sapphire by plasma-assisted MBE. Low-temperature nucleation layer followed by high-temperature buffer anneal sequence.
Nucl. Temp
550 °C
Buffer Temp
740 °C
Growth Rate
0.3 µm/hr
N₂ Flow
1.5 sccm
AlGaAs
III-V
AlGaAs/GaAs quantum well stack for laser diode active regions. Coming soon.
— Coming Soon —
AlN
III-N
AlN buffer on SiC for HEMT structures. Coming soon.
— Coming Soon —
CdTe
II-VI
CdTe on GaAs(001) for infrared detector substrates. Coming soon.
— Coming Soon —
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